Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
IRFIZ44N | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | - | 24 | 31 | 38 |
TO-220 |
|
FQB8N60CF | 600V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 1250 | 6.26 | 147 |
D2-PAK |
|
STD100N3LF3 | N-channel 30V - 0.0045? - 80A - DPAK Planar STripFET™ II Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | - | 4.5 | 80 | 110 |
D-PAK |
|
FCH041N65F_F085 | N-канальный MOSFET-транзистор семейства SuperFET® II, 650 В, 76 А | Fairchild Semiconductor |
MOSFET |
N | 1 | 650 | - | - | - | - | 41 | 76 | 595 |
|
|
STF16NM50N | N-channel 500 V - 0.21 ? - 15 A MDmesh™ II Power MOSFET TO-220FP | STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 210 | 15 | 30 |
|
|
IRF3315S | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 82 | 21 | 94 |
D2-PAK |
|
FDP52N20 | N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 41 | 52 | 357 |
TO-220 |
|
PHP9NQ20T | N-канальный TrenchMOS™ транзистор | NXP |
MOSFET |
N | 1 | 200 | - | - | - | - | 300 | 8.7 | 88 |
TO-220AB |
|
SUD06N10-225L | N-Channel 100-V (D-S) 175°C MOSFET | Vishay |
MOSFET |
N | 1 | 100 | - | - | - | 180 | 160 | 6.5 | 20 |
D-PAK |
|
IPD50R500CE | 500В силовой транзистор серии CoolMOS™ CE | Infineon Technologies |
MOSFET |
N | 1 | 500 | - | - | - | - | 500 | 24 | 57 |
TO-252 |
|
FQPF10N60C | 600V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 600 | 9.5 | 50 |
TO-220F |
|
IRF7314Q | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 98 | 58 | - | 5.2 | 2.4 |
SOIC-8 |
|
IPP60R600C6 | 600V CoolMOS™ C6 Power Transistor | Infineon Technologies |
MOSFET |
N | 1 | 600 | - | - | - | - | 540 | 7.3 | 63 |
TO-220 |
|
STQ3NK50ZR-AP | N-CHANNEL 500V - 2.8? - 2.3A TO-92 Zener-Protected SuperMESH™ MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 2800 | 0.5 | 3 |
TO-92 |
|
IRFZ48RSPBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 18 | 50 | 190 |
D2-PAK |
|
FDU8782 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 25 | - | - | - | 11 | 8.5 | 35 | 50 |
|
|
IRLR024N | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | 110 | 65 | 17 | 38 |
D-PAK |
|
ZXMP4A16G | 40V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 1 | -40 | - | - | - | 100 | 60 | -6.4 | 2 |
SOT-223-4 |
|
STF19NF20 | N-channel 200V - 0.15? - 15A - TO-220FP MESH OVERLAY™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 200 | - | - | - | - | 150 | 15 | 25 |
|
|
IRFD220PBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 200 | - | - | - | - | 800 | 0.8 | 1 |
HEXDIP |