Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| NTD4808N | Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK |
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ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 10.3 | 6.7 | 12 | 2 |
D-PAK |
| NTD4854N | Power MOSFET 25 V, 128 A, Single N-Channel, DPAK/IPAK |
|
ON Semiconductor |
MOSFET |
N | 1 | 25 | - | - | - | 3.6 | 2.9 | 20.8 | 2.5 |
D-PAK |
| NTD3817N | Power MOSFET 16 V, 34.5 A, Single N-Channel, DPAK/IPAK |
|
ON Semiconductor |
MOSFET |
N | 1 | 16 | - | - | - | 19.2 | 12.8 | 10.8 | 2.5 |
D-PAK |
| FDZ294N | N-Channel 2.5 V Specified PowerTrench BGA MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 34 | 61 | 417 |
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| BSB056N10NN3 G | MOSFET-транзистор с напряжением сток-исток 100 В, выполненный по технологии OptiMOS™ |
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Infineon Technologies |
MOSFET |
N | 1 | 100 | - | - | - | - | 5.6 | 83 | 78 |
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| BSF134N10NJ3 G | MOSFET-транзистор с напряжением сток-исток 100 В, выполненный по технологии OptiMOS™ |
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Infineon Technologies |
MOSFET |
N | 1 | 100 | - | - | - | - | 13.4 | 40 | 43 |
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| Si5853CDC | P-Channel 20-V (D-S) MOSFET with Schottky Diode |
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Vishay |
MOSFET |
P | 1 | 20 | 170 | - | 120 | 86 | - | 4 | 3.1 |
ChipFET_1206-8 |
| Si5904DC | Dual N-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | - | - | 115 | 65 | - | 3.1 | 1.1 |
ChipFET_1206-8 |
| NTHS4166N | Power MOSFET 30 V, 8.2 A, Single N-Channel, ChipFET Package |
|
ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 23 | 18 | 6.6 | 1.5 |
ChipFET_1206-8 |
| Si5435BDC | P-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 65 | 35 | 4.3 | 1.3 |
ChipFET_1206-8 |
| Si5908DC | Dual N-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 2 | 20 | 42 | - | 36 | 32 | - | 4.4 | 1.1 |
ChipFET_1206-8 |
| Si5401DC | P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | 44 | - | 33 | 26 | - | 5.2 | 1.3 |
ChipFET_1206-8 |
| NTHD4102P | Power MOSFET ?20 V, ?4.1 A, Dual P?Channel ChipFET |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | 120 | - | - | 64 | - | -2.9 | 1.1 |
ChipFET_1206-8 |
| Si5855DC | P-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
|
Vishay |
MOSFET |
P | 1 | 20 | 205 | - | 137 | 95 | - | 2.7 | 1.1 |
ChipFET_1206-8 |
| Si5404BDC | N-Channel 2.5-V (G-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 20 | - | - | 3.1 | 2.2 | - | 5.4 | 1.3 |
ChipFET_1206-8 |
| NTHS4501N | Power MOSFET 30 V, 6.7 A, Single N?Channel, ChipFET Package |
|
ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 40 | 30 | 4.9 | 1.3 |
ChipFET_1206-8 |
| Si5920DC | Dual N-Channel 1.5V (G-S) MOSFET |
|
Vishay |
MOSFET |
N | 2 | 8 | 36 | - | 285 | 25 | - | 4 | 3.12 |
ChipFET_1206-8 |
| Si5433BDC | P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | 56 | - | 41 | 30 | - | 4.8 | 1.3 |
ChipFET_1206-8 |
| NTHD4401P | Power MOSFET ?20 V, ?3.0 A, Dual P?Channel, ChipFET |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | 340 | - | - | 130 | - | -2.1 | 1.1 |
ChipFET_1206-8 |
| NTHD4502N | Power MOSFET 30 V, 3.9 A, Dual N?Channel ChipFET |
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ON Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 105 | 78 | 2.9 | 1.13 |
ChipFET_1206-8 |
