Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
ZXMN3G32DN8 | 30V SO8 dual N-channel enhancement mode MOSFET | Zetex |
MOSFET |
N | 2 | 30 | - | - | - | 45 | 28 | 7.1 | 2.1 |
SOIC-8 |
|
STS9D8NH3LL | Dual N-channel 30 V - 0.012 ? - 9 A - SO-8 low on-resistance STripFET™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 2 | 30 | - | - | - | 20 | 18 | 8 | 2 |
SOIC-8 |
|
IRF7555 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 105 | 55 | - | 4.3 | 1.25 |
|
|
FDS8984 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 24 | 19 | 7 | 1.6 |
SOIC-8 |
|
ZXMP3A17DN8 | DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 2 | -30 | - | - | - | 110 | 70 | -4.4 | 1.25 |
SOIC-8 |
|
FDS6894A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | 21 | - | - | 13 | - | 8 | 1.6 |
SOIC-8 |
|
Si9926BDY | Dual N-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
N | 2 | 20 | - | - | 24 | 16 | - | 6.2 | 1.14 |
SOIC-8 |
|
FDMC7672S | N-канальный MOSFET-транзистор PowerTrench® SyncFET 30 В, 14.8 А, 6.0 мОм | Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 7.1 | 6 | 18 | 36 |
|
|
STS4DPF20L | DUAL P-CHANNEL 20V - 0.07 W - 4A SO-8 STripFET™ POWER MOSFET | STMicroelectronics |
MOSFET |
P | 2 | 20 | - | - | - | 85 | 70 | 4 | 1.6 |
SOIC-8 |
|
Si1025X | P-Channel 60-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 60 | - | - | - | 8000 | 4000 | 0.19 | 0.25 |
SC89-6 |
|
BSS84V | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 2 | -50 | - | - | - | - | - | -0.13 | 0.15 |
|
|
SiA513DJ | N- and P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
N+P | 2 | 12 | - | - | 152 | 91 | - | 4.5 | 6.5 |
PowerPAK SC70-6 |
|
Si6943BDQ | Dual P-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
P | 2 | 12 | - | - | 8 | 6 | - | 2.3 | 0.8 |
TSSOP-8 |
|
TSM6981DCA | Сдвоенный P-канальный MOSFET транзистор, -20 В, -5 А | Taiwan Semiconductor |
MOSFET |
P | 2 | -20 | 60 | 50 | - | 40 | - | -5 | 1.14 |
TSSOP-8 |
|
Si7872DP | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode | Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 20 | 16 | 6.4 | 1.4 |
PowerPAK_SO-8 |
|
IRF7901D1 | HEXFET Power MOSFETs Dual N-Channel | International Rectifier (IRF) |
MOSFET |
N | 2 | 30 | - | - | - | 32 | - | 6.2 | 2 |
SOIC-8 |
|
Si4500BDY | Complementary MOSFET Half-Bridge (N- and P-Channel) | Vishay |
MOSFET N+P |
N+P | 2 | 20 | - | - | 24 | 16 | - | 3.8 | 1.3 |
SOIC-8 |
|
DMN5L06DMK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 50 | - | - | - | - | 3500 | 0.308 | 0.4 |
|
|
NTLJD2104P | Power MOSFET ?12 V, ?4.3 A, COOL Dual P?Channel, 2x2 mm, WDFN package | ON Semiconductor |
MOSFET |
P | 2 | -12 | 110 | - | - | 60 | - | -3.5 | 1.5 |
|
|
ZXMN3F31DN8 | 30V SO8 dual N-channel enhancement mode MOSFET | Zetex |
MOSFET |
N | 2 | 30 | - | - | - | 39 | 24 | 7.3 | 2.1 |
SOIC-8 |