Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
NTR3161N | Power MOSFET 20 V, 3.3 A, Single N?Channel, SOT?23 | ON Semiconductor |
MOSFET |
N | 1 | 20 | 52 | - | - | 38 | - | 3.3 | 0.82 |
SOT-23-3 |
|
IPD50R280CE | 500В силовой транзистор серии CoolMOS™ CE | Infineon Technologies |
MOSFET |
N | 1 | 500 | - | - | - | - | 280 | 42.9 | 92 |
TO-252 |
|
HUF75639G3 | N-Channel UltraFET Power MOSFETs | Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 21 | 56 | 200 |
|
|
IRFZ48S | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 18 | 50 | 190 |
D2-PAK |
|
STP20NF20 | N-channel 200V - 0.10? -18A- TO-220 Low gate charge STripFET™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 200 | - | - | - | - | 100 | 18 | 90 |
TO-220 |
|
NTE4153N | Small Signal MOSFET 20 V, 915 mA, Single N?Channel with ESD Protection, SC?89 | ON Semiconductor |
MOSFET |
N | 1 | 20 | 242 | - | - | 127 | - | 0.915 | 0.3 |
|
|
IRLR024Z | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | 100 | 58 | 16 | 35 |
D-PAK |
|
NDS351AN | N-Channel, Logic Level, PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 120 | 92 | 1.4 | 0.5 |
|
|
ZXMP6A13G | 60V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 1 | -60 | - | - | - | 595 | 390 | -2.3 | 2 |
SOT-223-4 |
|
IRFD224 | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 250 | - | - | - | - | 1100 | 0.63 | 1 |
HEXDIP |
|
STD10NF10 | N-channel 100V - 0.115? - 13A - DPAK - IPAK Low gate charge STripFET™ II Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 115 | 13 | 50 |
D-PAK |
|
STP11NM80 | N-channel 800 V - 0.35 ? - 11 A - TO-220 MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 800 | - | - | - | - | 350 | 11 | 150 |
TO-220 |
|
IRFS23N20D | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 200 | - | - | - | - | 100 | 24 | 170 |
D2-PAK |
|
DMN3051L | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 54 | 33 | 5.8 | 1.4 |
SOT-23-3 |
|
FDB3502 | 75V N-Channel Power Trench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 75 | - | - | - | - | 37 | 6 | 3.1 |
D2-PAK |
|
STD110NH02L | N-channel 24V - 0.0044? - 80A - DPAK STripFET™ III Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 24 | - | - | - | - | 4.4 | 80 | 125 |
D-PAK |
|
STD5NK52ZD | N-channel 520 V,1.22 ?,4.4 A,IPAK,DPAK Zener-protected SuperMESH™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 520 | - | - | - | - | 1220 | 4.4 | 70 |
D-PAK |
|
IRF6623 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | - | 9.7 | 5.7 | 55 | 42 |
|
|
NVMFS5C612NL | N-канальный MOSFET-транзистор поколения Trench 6 с напряжением сток-исток 60 В | ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 2.3 | 1.5 | 235 | 167 |
|
|
FQP90N10V2 | 100V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 8.5 | 90 | 250 |
TO-220 |