Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| NTGD3133P | Power MOSFET ?20 V, ?2.5 A, P?Channel, TSOP?6 Dual |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | - | - | - | 90 | - | -2.2 | 1 |
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| Si3440DV | N-Channel 150-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 150 | - | - | - | - | 310 | 1.2 | 1.14 |
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| Si3473CDV | P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 26 | - | 21 | 16 | - | 8 | 4.2 |
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| Si3446ADV | N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | - | - | 53 | 31 | 15 | 6 | 3.2 |
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| Si3434DV | N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | 42 | 28 | - | 4.6 | 1.14 |
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| NTGS3443B | Power MOSFET -20 V, -4.2 A, Single P-Channel, TSOP-6 |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | 65 | 45 | - | -3.7 | 1.25 |
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| IRLMS6702 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 375 | 200 | - | 2.4 | 1.7 |
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| Si3454CDV | N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 66 | 41 | 4.2 | 1.5 |
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| IRLTS6342TRPBF | Однокристальный n-канальный МОП-транзистор с технологией HEXFET на 30В в корпусе TSOP-6 (Micro 6) |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | 22 | - | 17.5 | - | 8.3 | 2 |
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| IRF5810 | HEXFET Power MOSFETs Dual P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 135 | 90 | - | 2.9 | 0.96 |
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| Si3469DV | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | - | 41 | 24 | 5 | 1.14 |
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| Si3552DV | N-/P-Channel 30-V (D-S) Rated MOSFET |
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Vishay |
MOSFET |
N+P | 2 | 30 | - | - | - | 2.98 | 1.65 | 1.8 | 1.15 |
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| Si3459BDV | P-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 60 | - | - | - | 240 | 180 | 2.9 | 3.3 |
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| NTGD3148N | Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 |
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ON Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 41.7 | - | 3 | 0.9 |
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| Si3473DV | P-Channel 12-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 12 | 33 | - | 24 | 19 | - | 5.9 | 1.1 |
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| Si3460BDV | N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | 33 | - | 27 | 23 | 22 | 8 | 3.5 |
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| Si3454ADV | 30-V (D-S) Single |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 70 | 48 | 3.4 | 1.14 |
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| IRF5806 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 147 | 86 | - | 4 | 2 |
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| NTGS3443T1 | Power MOSFET 2 Amps, 20 Volts P?Channel TSOP?6 |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | 82 | 58 | - | -2.2 | 0.5 |
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| IRLMS6802 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 100 | 50 | - | 5.6 | 2 |
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