Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
NTA4153N | Small Signal MOSFET 20 V, 915 mA, Single N?Channel with ESD Protection, SC?75 | ON Semiconductor |
MOSFET |
N | 1 | 20 | 242 | - | - | 127 | - | 915 | 300 |
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Si3433BDV | P-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 60 | - | 45 | 34 | - | 4.3 | 1.1 |
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TSM2313CX | P-канальный MOSFET транзистор, -20 В, -3.3 А | Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | 130 | 90 | - | 70 | - | -3.3 | 2 |
SOT-23-3 |
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FDS6892A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 13 | - | 7.5 | 1.6 |
SOIC-8 |
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DMP2004VK | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 2 | -20 | 1700 | - | - | 700 | - | -0.53 | 0.4 |
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SiB419DK | P-Channel 12-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 12 | 89 | - | 68 | 49 | - | 9 | 13.1 |
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IRF7420 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 12 | - | - | - | 14 | - | 11.5 | 2.5 |
SOIC-8 |
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ZXMN2A04DN8 | DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
N | 2 | 20 | - | - | - | 25 | - | 7.7 | 2.1 |
SOIC-8 |
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IRF7331 | HEXFET Power MOSFETs Dual N-Channel | International Rectifier (IRF) |
MOSFET |
N | 2 | 20 | - | - | 45 | 30 | - | 7 | 2 |
SOIC-8 |
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Si5908DC | Dual N-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
N | 2 | 20 | 42 | - | 36 | 32 | - | 4.4 | 1.1 |
ChipFET_1206-8 |
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Si4963BDY | Dual P-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | - | - | 40 | 25 | - | 4.9 | 1.1 |
SOIC-8 |
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SiA917DJ | Dual P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | - | - | 152 | 91 | - | 4.5 | 6.5 |
PowerPAK SC70-6 |
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NTR1P02LT1 | Power MOSFET ?20 V, ?1.3 A, P?Channel SOT?23 Package | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 135 | - | -1.3 | 0.4 |
SOT-23-3 |
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IRLMS2002 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | 45 | 30 | - | 6.5 | 2 |
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Si8415DB | P-Channel 12-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 12 | 50 | - | 38 | 31 | - | 5.3 | 1.47 |
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BUK7Y13-40B | N-channel TrenchMOS logic level FET | NXP |
MOSFET |
N | 1 | 40 | - | - | - | 11 | - | 58 | 85 |
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NTE4151P | Small Signal MOSFET ?20 V, ?760 mA, Single P?Channel, Gate Zener, SC?89 | ON Semiconductor |
MOSFET |
P | 1 | -20 | 490 | - | - | 260 | - | -760 | 301 |
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Si3493BDV | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 34.7 | - | 28.4 | 23 | - | 8 | 2.97 |
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TSTSM2311CX | P-канальный MOSFET транзистор, -20 В, -4 А | Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | - | 85 | - | 55 | - | -4 | 0.9 |
SOT-23-3 |
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PH2520U | N-channel TrenchMOS ultra low level FET | NXP |
MOSFET |
N | 1 | 20 | - | - | 2.8 | 2.1 | - | 100 | 62.5 |
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