Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
STW14NM65N | N-channel 650 V, 0.33 ?, 12 A MDmesh™ II Power MOSFET TO-247 | STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 330 | 12 | 125 |
|
|
IRF6622 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 25 | - | - | - | 8.9 | 6.3 | 15 | 34 |
|
|
FDS6961A | Dual N-Channel Logic Level PowerTrenchTM MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 107 | 76 | 3.5 | 2 |
SOIC-8 |
|
FQA13N50C | 500V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 390 | 13.5 | 218 |
TO-3PN |
|
TSM8N80CZ | Силовой N-канальный MOSFET транзистор, 800 В, 8 А | Taiwan Semiconductor |
MOSFET |
N | 1 | 800 | - | - | - | - | 1400 | 8 | 250 |
TO-220 |
|
STD90N4F3 | N-channel 40 V, 5.4 m?, 80 A, DPAK STripFET™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 40 | - | - | - | - | 5.4 | 80 | 110 |
D-PAK |
|
STB30NM60ND | N-channel 600 V, 0.11 ?, 25 A FDmesh™ II Power MOSFET(with fast diode) D2PAK | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 110 | 25 | 190 |
D2-PAK |
|
IPB038N12N3 | Силовой MOSFET-транзситор серии OptiMOS®3, 120 В, 120 А, 3.8 мОм | Infineon Technologies |
MOSFET |
N | 1 | 120 | - | - | - | - | 3.8 | 120 | 300 |
D2-PAK |
|
IRLR3714Z | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | - | 25 | 15 | 37 | 35 |
D-PAK |
|
IXFX44N80P | N-канальный силовой MOSFET транзистор со встроенным быстрым диодом (HiPerFET) | IXYS |
MOSFET |
N | 1 | 800 | 190 | 190 | 190 | 190 | 190 | 44 | 1200 |
|
|
IRFP350LCPBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 300 | 16 | 190 |
TO-247AC |
|
SUM47N10-24L | N-Channel 100-V (D-S) 175°C MOSFET | Vishay |
MOSFET |
N | 1 | 100 | - | - | - | 21 | 19 | 47 | 136 |
D2-PAK |
|
PSMN012-25YLC | N-канальный MOSFET-транзистор, изготовленный по технологии NextPower | NXP |
MOSFET |
N | 1 | 25 | 12.6 | 12.6 | 12.6 | 12.6 | 12.6 | 33 | 26 |
|
|
IXFK170N10P | PolarHT HiPerFET Power MOSFET | ISSI |
MOSFET |
N | 1 | 100 | - | - | - | - | 9 | 170 | 714 |
|
|
STF25NM50N | N-channel 500V - 0.11? - 22A - TO-220FP Second generation MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 110 | 22 | 40 |
|
|
IPB120N06S4-02 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor | Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 2 | 120 | 188 |
TO-263-3 |
|
IRFSL4227PBF | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 200 | - | - | - | - | 26 | 62 | 330 |
TO-262 |
|
FQU20N06L | 60V LOGIC N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 46 | 17.2 | 38 |
|
|
IRF840AL | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 850 | 8 | 125 |
TO-262 |
|
DMN3052L | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 33 | 26 | 5.4 | 1.4 |
SOT-23-3 |