Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
FDG6317NZ | Dual 20v N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | 82 | - | - | - | 300 | 0.7 | 0.3 |
SC70-6 |
|
IRF7342Q | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 55 | - | - | - | 170 | 105 | 3.4 | 2 |
SOIC-8 |
|
TSM2N7002KDCU6 | N-канальный MOSFET транзистор, 60 В, 0.3 А | Taiwan Semiconductor |
MOSFET |
N | 2 | 60 | - | - | - | 4000 | 2000 | 0.3 | 0.3 |
|
|
Si7216DN | Dual N-Channel 40-V (D-S) MOSFET | Vishay |
MOSFET |
N | 2 | 40 | - | - | - | 31 | 25 | 6 | 20.8 |
PowerPAK_1212-8 |
|
NTMD6P02R2 | Power MOSFET 6 Amps, 20 Volts P?Channel SOIC?8, Dual | ON Semiconductor |
MOSFET |
P | 2 | -20 | - | - | - | 27 | - | -7.8 | 2 |
SOIC-8 |
|
DMP57D5UV | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 2 | -50 | - | - | - | - | - | -0.16 | 0.4 |
|
|
NTHD4102P | Power MOSFET ?20 V, ?4.1 A, Dual P?Channel ChipFET | ON Semiconductor |
MOSFET |
P | 2 | -20 | 120 | - | - | 64 | - | -2.9 | 1.1 |
ChipFET_1206-8 |
|
EFC6601R | Сдвоенный N-канальный силовой MOSFET-транзистор на 24 В / 13 А / 11.5 мОм, для схем коммутации нагрузки в устройствах заряда/разряда Li-ion аккумуляторных батарей | ON Semiconductor |
MOSFET |
N | 2 | 24 | - | 17 | - | 11.5 | - | 13 | 2 |
|
|
Si7994DP | Dual N-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 5.6 | 4.6 | 60 | 46 |
PowerPAK_SO-8 |
|
IRF7530 | HEXFET Power MOSFETs Dual N-Channel | International Rectifier (IRF) |
MOSFET |
N | 2 | 20 | - | - | 45 | 30 | - | 5.4 | 1.3 |
|
|
FDC6561AN | Dual N-Channel Logic Level PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 113 | 82 | 2.5 | 0.96 |
SSOT-6 |
|
IRF8513PbF | 30V Dual N-Channel HEXFET Power MOSFET | International Rectifier (IRF) |
MOSFET |
N | 2 | 30 | - | - | - | 18.1 | 12.5 | 11 | 2.4 |
SOIC-8 |
|
Si1023X | Dual P-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | 1800 | - | 1200 | 800 | - | 0.37 | 0.25 |
SC89-6 |
|
Si4226DY | Dual N-Channel 25-V (D-S) MOSFET | Vishay |
MOSFET |
N | 2 | 25 | - | - | 20 | 15.5 | - | 8 | 3.2 |
SOIC-8 |
|
IRF7504 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 400 | 270 | - | 1.7 | 1.25 |
|
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DMN2215UDM | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 20 | 165 | - | - | 80 | - | 2 | 0.65 |
|
|
Si5902BDC | Dual N-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 81 | 5.3 | 4 | 3.12 |
ChipFET_1206-8 |
|
Si1034X | N-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
N | 2 | 20 | 9000 | - | 7000 | 5000 | - | 0.18 | 0.25 |
SC89-6 |
|
FDS6994S | Dual Notebook Power Supply N-Channel PowerTrench SyncFet | Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 19 | 16 | 8.2 | 2 |
SOIC-8 |
|
NTHD2102P | Power MOSFET ?8.0 V, ?4.6 A Dual P?Channel ChipFET | ON Semiconductor |
MOSFET |
P | 2 | -8 | 100 | - | - | 50 | - | -3.4 | 1.1 |
ChipFET_1206-8 |