Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| BSP250 | P-channel enhancement mode vertical D-MOS transistor |
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NXP |
MOSFET |
P | 1 | 30 | - | - | - | - | 250 | 3 | 1.65 |
SOT-223-4 |
| BSP89 | N-канальный D-MOS транзистор режима вертикального повышения |
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NXP |
MOSFET |
N | 1 | 240 | - | - | - | 7500 | 2800 | 0.375 | 1.5 |
SOT-223-4 |
| BSS123 | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Diodes Incorporated |
MOSFET |
N | 1 | 100 | - | - | - | - | 6000 | 0.17 | 0.36 |
SOT-23-3 |
| BSS123 | N-канальный TrenchMOS транзистор с логическим уровнем FET |
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NXP |
MOSFET |
N | 1 | 100 | - | - | - | - | 3500 | 0.15 | 0.25 |
SOT-23-3 |
| BSS123A | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Diodes Incorporated |
MOSFET |
N | 1 | 100 | - | - | - | 10000 | 6000 | 0.17 | 0.36 |
SOT-23-3 |
| BSS123LT1 | Power MOSFET 170 mAmps, 100 Volts N?Channel SOT?23 |
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ON Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 5000 | 0.17 | 0.225 |
SOT-23-3 |
| BSS123W | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 1 | 100 | - | - | - | 10000 | 6000 | 0.17 | 0.2 |
SOT-23-3 |
| BSS138 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 3500 | 0.2 | 0.3 |
SOT-23-3 |
| BSS138DW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 2 | 50 | - | - | - | - | 3500 | 0.2 | 0.2 |
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| BSS138LT1 | Power MOSFET 200 mA, 50 V N?Channel SOT?23 |
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ON Semiconductor |
MOSFET |
N | 1 | 50 | - | - | - | - | - | 0.2 | 0.225 |
SOT-23-3 |
| BSS138W | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 1400 | 0.2 | 0.3 |
SOT-323 |
| BSS192 | P-channel enhancement mode vertical D-MOS transistor |
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NXP |
MOSFET |
P | 1 | 240 | - | - | - | - | 12000 | 200 | 1 |
SOT-89 |
| BSS84 | P-channel enhancement mode vertical D-MOS transistor |
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NXP |
MOSFET |
P | 1 | 50 | - | - | - | - | 0.1 | 130 | 250 |
SOT-23-3 |
| BSS84 | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 1 | -50 | - | - | - | - | 10000 | -0.13 | 0.3 |
SOT-23-3 |
| BSS84DW | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 2 | -50 | - | - | - | - | - | -0.13 | 0.3 |
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| BSS84LT1 | Power MOSFET 130 mA, 50 V P?Channel SOT?23 |
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ON Semiconductor |
MOSFET |
P | 1 | 50 | - | - | - | - | - | 0.13 | 0.225 |
SOT-23-3 |
| BSS84V | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 2 | -50 | - | - | - | - | - | -0.13 | 0.15 |
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| BSS84W | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 1 | -50 | - | - | - | - | - | -0.13 | 0.2 |
SOT-323 |
| BSS87 | N-канальный D-MOS транзистор режима вертикального повышения |
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NXP |
MOSFET |
N | 1 | 200 | - | - | - | - | 1600 | 0.4 | 1 |
SOT-89 |
| BST82 | N-канальный полевой транзистор |
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NXP |
MOSFET |
N | 1 | 100 | - | - | - | 10000 | - | 0.19 | 0.83 |
SOT-23-3 |
