Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRFP4468PbF | 100V Single N-Channel HEXFET Power MOSFET in a TO-247AC |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | 2 | 2.6 | 195 | 520 |
TO-247AC |
| IRFB3006PbF | 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 60 | - | - | - | - | 2.1 | 195 | 375 |
TO-220AB |
| IRFP4368PbF | HEXFET Power MOSFET |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 75 | - | - | - | 1.46 | 1.85 | 195 | 520 |
TO-247AC |
| IRFP4004PbF | HEXFET Power MOSFET |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | 1.35 | 1.7 | 195 | 380 |
TO-247AC |
| IRLS4030-7PPbF | 100V Single N-Channel HEXFET Power MOSFET |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | 3.3 | 3.2 | 190 | 370 |
D2-PAK-7 |
| TSM190N08CZ | Силовой N-канальный MOSFET транзистор, 75 В, 190 А |
|
Taiwan Semiconductor |
MOSFET |
N | 1 | 70 | - | - | - | - | 4.2 | 190 | 250 |
TO-220 |
| IRF1503S | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | - | 3.3 | 190 | 200 |
D2-PAK |
| IRF1503L | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | - | 3.3 | 190 | 200 |
TO-262 |
| IRFS4010-7PPbF | 100V Single N-Channel HEXFET Power MOSFET |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 3.3 | 190 | 380 |
D2-PAK-7 |
| IRFS4010-7PPbF | 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-pin package |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 3.3 | 190 | 380 |
D2-PAK-7 |
| IRF1404ZS | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 3.7 | 190 | 220 |
D2-PAK |
| IRF1404ZL | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 3.7 | 190 | 220 |
TO-262 |
| IRF1404Z | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 3.7 | 190 | 220 |
TO-220AB |
| IXFN210N20P | N-канальный силовой MOSFET транзистор со встроенным быстрым диодом (HiPerFET) |
|
IXYS |
MOSFET |
N | 1 | 200 | 10.5 | 10.5 | 10.5 | 10.5 | 10.5 | 188 | 1070 |
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| IRLBA1304P | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | 6.5 | 4 | 185 | 300 |
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| IXTQ182N055T | N-канальный силовой TrenchMV MOSFET транзистор |
|
IXYS |
MOSFET |
N | 1 | 55 | 5 | 5 | 5 | 5 | 5 | 182 | 360 |
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| IXTH182N055T | N-канальный силовой TrenchMV MOSFET транзистор |
|
IXYS |
MOSFET |
N | 1 | 55 | 5 | 5 | 5 | 5 | 5 | 182 | 360 |
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| IXTA182N055T7 | N-канальный силовой TrenchMV MOSFET транзистор |
|
IXYS |
MOSFET |
N | 1 | 55 | 5 | 5 | 5 | 5 | 5 | 182 | 360 |
TO-263-7 |
| IXTP182N055T | N-канальный силовой TrenchMV MOSFET транзистор |
|
IXYS |
MOSFET |
N | 1 | 55 | 5 | 5 | 5 | 5 | 5 | 182 | 360 |
TO-220 |
| IXTA182N055T | N-канальный силовой TrenchMV MOSFET транзистор |
|
IXYS |
MOSFET |
N | 1 | 55 | 5 | 5 | 5 | 5 | 5 | 182 | 360 |
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