Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
NTHS4101P | Power MOSFET ?20 V, 6.7 A, P?Channel ChipFET | ON Semiconductor |
MOSFET |
P | 1 | -20 | 42 | - | - | 21 | - | -4.8 | 1.3 |
ChipFET_1206-8 |
|
Si5481DU | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 33 | - | 24 | 18 | - | 12 | 17.8 |
PowerPAK_ChipFET |
|
IRFR9210 | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3000 | 1.9 | 25 |
D-PAK |
|
DMP3098L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 98 | 56 | -3.8 | 1.8 |
SOT-23-3 |
|
Si4845DY | P-Channel 20-V (D-S) MOSFET with Schottky Diode | Vishay |
MOSFET |
P | 1 | 20 | - | - | 285 | 175 | - | 2.7 | 2.75 |
SOIC-8 |
|
IXTH16P20 | Standard Power MOSFET | IXYS |
MOSFET |
P | 1 | -200 | 160 | 160 | 160 | 160 | 160 | -16 | 300 |
|
|
IXTC36P15P | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -150 | 120 | 120 | 120 | 120 | 120 | -22 | 150 |
|
|
STT5PF20V | P-CHANNEL 20V - 0.065W - 5A SOT23-6L 2.5V-DRIVE STripFET™ II POWER MOSFET | STMicroelectronics |
MOSFET |
P | 1 | 20 | - | - | - | 65 | - | 5 | 1.6 |
|
|
NTR1P02LT1 | Power MOSFET ?20 V, ?1.3 A, P?Channel SOT?23 Package | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 135 | - | -1.3 | 0.4 |
SOT-23-3 |
|
SUD45P03-10 | P-Channel Enhancement-Mode Transistor | Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 18 | 10 | 15 | 70 |
D-PAK |
|
TSM2303CX | P-канальный MOSFET транзистор, -30 В, -1.3 А | Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 300 | 180 | -1.3 | 0.7 |
SOT-23-3 |
|
TJ50S06M3L | Силовой P-канальный MOSFET-транзистор | Toshiba |
MOSFET |
P | 1 | -60 | - | - | - | - | 13.8 | -50 | 90 |
|
|
ZVP3310A | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex |
MOSFET |
P | 1 | -100 | - | - | - | - | 20000 | -0.14 | 0.625 |
TO-92 |
|
Si4833ADY | P-Channel 30-V (D-S) MOSFET with Schottky Diode | Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 90 | 59 | 4.6 | 2.75 |
SOIC-8 |
|
IRF9Z34NS | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | - | 100 | 19 | 68 |
D2-PAK |
|
FDMJ1023PZ | -20V Dual P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
P | 2 | 20 | 173 | - | 128 | 93 | - | 2.9 | 1.4 |
MicroFET |
|
IRF9540NS | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 100 | - | - | - | - | 117 | 23 | 3.8 |
D2-PAK |
|
IRFD9220PBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 1500 | 0.56 | 1 |
HEXDIP |
|
NTLJS2103P | Power MOSFET -12 V, -7.7 A, Cool Single P-Channel, 2x2 mm, WDFN Package | ON Semiconductor |
MOSFET |
P | 1 | -12 | 45 | - | - | 25 | - | -5.9 | 1.9 |
|
|
Si1305DL | P-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 8 | 440 | - | 315 | 230 | - | 0.86 | 0.29 |
SC70-3 |