Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| FDS6894A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | 21 | - | - | 13 | - | 8 | 1.6 |
SOIC-8 |
| FDS6892A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 13 | - | 7.5 | 1.6 |
SOIC-8 |
| FDS6898A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 10 | - | 9.4 | 2 |
SOIC-8 |
| FDG327N | 20V N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 20 | 82 | - | - | 57 | - | 1.5 | 0.42 |
SC70-6 |
| FDV303N | Digital FET , N-Channel |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 25 | - | - | 440 | 330 | - | 0.68 | 0.35 |
SOT-23-3 |
| FDY2000PZ | -20V Dual P-Channel Specified PowerTrench® MOSFET |
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Fairchild Semiconductor |
MOSFET |
P | 2 | -20 | 2700 | 1600 | - | 1200 | - | -0.35 | 0.625 |
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| FDG313N | Digital FET, N-Channel |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 25 | - | - | 450 | 350 | - | 0.95 | 0.75 |
SC70-6 |
| FDT439N | N-Channel 2.5V Specified Enhancement MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | 58 | - | 45 | - | 6.3 | 3 |
SOT-223-4 |
| IRL640A | Advanced Pover MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | 180 | - | 18 | 110 |
TO-220 |
| FDW2501N | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 15.5 | - | 6 | 1 |
TSSOP-8 |
| IRLS640A | Advanced Power MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | 180 | - | 9.8 | 40 |
TO-220F |
| FDC6321C | Dual N & P Channel, Digital FET |
|
Fairchild Semiconductor |
N+P |
N, P | 2 | 25 | - | - | 440 | 330 | - | 1 | 0.9 |
SSOT-6 |
| NDS331N | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 20 | - | - | 150 | 110 | - | 1.3 | 0.5 |
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| FDS6890A | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 13 | - | 7.5 | 1.6 |
SOIC-8 |
| FDMA1024NZ | Dual N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | 52 | 37 | - | 5 | 1.4 |
MicroFET |
| FDMC6890NZ | Dual N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 58 | - | 4 | 1.92 |
Power 33 |
| FDG332PZ | -20V P-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
P | 1 | 20 | 117 | - | 90 | 73 | - | 2.6 | 48 |
SC70-6 |
| FDS4672A | 40V N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 40 | - | - | - | 10 | - | 11 | 2.5 |
SOIC-8 |
| FQPF5N50C | 500V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | 1140 | - | 5 | 38 |
TO-220F |
| FQP5N50C | 500V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | 1140 | - | 5 | 73 |
TO-220 |
