Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
DMN2005K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 20 | 3500 | - | 1700 | - | - | 0.6 | 0.35 |
SOT-23-3 |
|
DMN2009LSS | SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 20 | - | - | - | 9 | 8 | 12 | 2 |
|
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DMN2040LSD | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 2 | 20 | - | - | - | 19 | - | 7 | 2 |
|
|
DMN2050L | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 20 | - | - | - | 24 | - | 5.9 | 1.4 |
SOT-23-3 |
|
DMN2100UDM | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 20 | 56 | - | - | 32 | - | 3.3 | 0.9 |
|
|
DMN2104L | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 20 | - | - | - | 42 | - | 4.3 | 1.4 |
SOT-23-3 |
|
DMN2112SN | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 20 | - | - | - | 100 | - | 1.2 | 0.5 |
|
|
DMN2114SN | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 20 | - | - | - | 100 | - | 1.2 | 0.5 |
|
|
DMN2170U | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 20 | - | - | - | 50 | - | 2.3 | 0.6 |
SOT-23-3 |
|
DMN2215UDM | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 20 | 165 | - | - | 80 | - | 2 | 0.65 |
|
|
DMN2230U | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 20 | 170 | - | - | 81 | - | 2 | 0.6 |
SOT-23-3 |
|
DMN3007LSS | SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 7.9 | 5 | 16 | 2.5 |
|
|
DMN3010LSS | SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 13 | 9 | 16 | 2.5 |
|
|
DMN3030LSS | SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 26.4 | 15.7 | 9 | 2.5 |
|
|
DMN3031LSS | SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 26 | 15 | 9 | 2.5 |
|
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DMN3033LDM | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 36 | 25 | 6.9 | 2 |
|
|
DMN3033LSD | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 30 | - | - | - | 33 | 22 | 6.9 | 2 |
|
|
DMN3033LSN | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 36 | 25 | 6 | 1.4 |
|
|
DMN3050S | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 40 | 27 | 5.2 | 1.4 |
SOT-23-3 |
|
DMN3051L | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 54 | 33 | 5.8 | 1.4 |
SOT-23-3 |